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Chemicals and Materials for Sub-0.100nm IC Manufacturing

  • March 2017
  • -
  • Information Network
  • -
  • 114 pages

Chemicals and materials are used in every processing step in the fabrication of silicon and gallium arsenide integrated circuits. Technological advances in Si and GaAs ICs have resulted in more stringent requirements in the purity and quality of processing chemicals and materials for cleaning, etching, and deposition. As linewidths decrease, the level and size of contaminants in both chemicals and the manufacturing cleanroom become increasingly important as it directly impacts device yield.

This report addresses a number of important factors that will impact the consumption of chemicals and materials for manufacturing ICs with feature sizes <100nm: Technological issues and trends; Purity and particulate requirements; Chemical dispensing practices; Acid reprocessing; Strategic considerations for chemical users; Analysis and forecast of the worldwide chemical market; and trends in usage as devices features decrease. Market shares of vendors also presented


A $17 billion market in 2015

Table Of Contents

Chemicals and Materials for Sub-0.100nm IC Manufacturing
TABLE OF CONTENTS

Chapter 1 Introduction 1-1

Chapter 2 Executive Summary 2-1

2.1 Key Industry Trends 2-1
2.2 Market Outlook 2-4
2.3 Supplier Opportunities 2-6

Chapter 3 IC Industry Trends 3-1

3.1 IC Industry Growth Forecast 3-1
3.2 Trends in IC Processing Technology 3-4

Chapter 4 Liquid Chemicals 4-1

4.1 Technology Issues 4-1
4.1.1 Acids and Solvents 4-1
4.1.2 Resists 4-5
4.2 Purity Requirements 4-14
4.2.1 Purification Methods 4-14
o Trends For Purity - Trace Elements 4-15
4.2.2 Particulates 4-16
o Effects on Yield 4-16
o Particulate Removal Techniques 4-22
o Particle Monitoring 4-23
4.3 Chemical Management 4-24
4.3.1 Introduction 4-24
4.3.2 Chemical Usage Reduction 4-26

Chapter 5 Gases 5-1

5.1 Technology Issues 5-1
5.2 Requirements 5-3
5.2.1 Purification Alternatives 5-3
o Historical Perspective 5-3
o Trends For Purity - Consistency 5-5
5.2.2 Particulate Considerations 5-7
o Particle Monitoring 5-7
o Filtration Methods 5-9
5.2.3 Summary 5-13

Chapter 6 Sputtering and Evaporation Materials 6-1

6.1 Technology Issues 6-1
6.2 Purity Requirements 6-10

Chapter 7 Market Forecast 7-1

7.1 Market Driving Forces and Assumptions 7-1
7.2 Chemicals and Materials Forecast 7-3
7.2.1 Forecast By Chemical and Material 7-3
7.2.2 Chemical Use Per Unit Area Of Silicon Processed 7-21
7.2.3 Market Shares 7-23

Chapter 8 Strategic Customer Issues 8-1

8.1 Benchmarking a Vendor 8-1
8.1.1 Statistical Quality Control 8-1
o Assay and Related Items 8-3
o Trace Elements 8-4
o Particles 8-5
8.1.2 Analytical Capabilities 8-6
8.1.3 Product Manufacturing And/Or Sourcing 8-8
8.1.4 General Considerations 8-9
o Installation and Retrofitting Costs 8-9
8.2 In-House Quality Control And Assurance 8-13
8.2.1 Analytical Tools 8-13
8.2.2 How Much Testing 8-15
8.2.3 Exhaust Gas Analysis 8-16


LIST OF FIGURES

4.1 Relationship Between Device Yield and Particles 4-18
4.2 Relationship Between Die Yield and Chip Size 4-20
4.3 Chemical Management Services Tasks 4-25
6.1 ITRS Roadmap 6-3
6.2 Gate-Last Approach 6-8
6.3 Gate-First Approach 6-9
7.1 Chemical/Semiconductor Revenue Ratio 7-8
7.2 Worldwide Resist Market 7-12
7.3 Resist/Semiconductor Revenue Ratio 7-13
7.4 2012 Silicon Wafer Market 7-17
7.5 2015 Silicon Wafer Market 7-18
7.6 Cost of Chemicals Per Square Inch of Silicon 7-22
7.7 Worldwide Market Shares for Gas Suppliers 7-24
7.8 Worldwide Market Shares for Liquid Chemical Suppliers 7-25
7.9 Worldwide Market Shares for Photoresist Suppliers 7-26
7.10 Worldwide Market Shares for Silicon Wafer Companies 7-27
7.12 Pricing Trend For Silicon Wafers 7-29


LIST OF TABLES

4.1 Common Wafer Processing Chemicals 4-2
4.2 Photoresist Stripping Solutions 4-10
5.1 Gas Control System Issues 5-2
5.2 Potential Hazards of Processing Gases 5-8
7.1 Worldwide Forecast of Chemicals and Materials for 7-5
IC Manufacture
7.2 Worldwide Market Forecast of Si Wafers 7-15
7.3 Worldwide Market Forecast of Sputtering Targets 7-20

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