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Wide Bandgap Semiconductors Driving High Power Applications

The TechVision division of Frost & Sullivan has evaluated high power electronics technologies, and has assessed innovations that will have an impact on various applications in the near-, medium-, and long- term.
Increasing need for high-power/high-voltage, high-temperature and high switching frequency power electronic devices in applications such as automotive, aerospace and defense drives the need for wide band gap materials. The high power electronic devices industry has evolved to be highly dynamic one with developments and innovations in materials, technologies, simulation tools, modelling and applications. The high power electronics technologies are the next revolution in the power industry and it sets new standards in saving power for virtually everything that makes use of or converts electricity. High power electronics technologies come into play wherever there is a need to modify different forms of electric energy such as current, voltage, and frequency.

The report focuses on analysing key innovations in Silicon Carbide and Gallium Nitride based power electronic devices intended for high power applications in aerospace, automotive, smart grids, industrial drives and data centres.

Research Methodology Step by Step Approach
Step 1: To provide a thorough analysis of each topic, TechVision analysts perform a review of patents to become familiar with the major developers and commercial participants and their processes.
Step 2: Building on the patent search, the analysts review abstracts to identify key scientific and technical papers that provide insights into key industry participants and the technical processes, on which they work.
Step 3: The analysts then create a detailed questionnaire with content created to address the research objectives of the study, which functions as a guide during the interview process. While the analysts use structured questionnaires to guarantee coverage of all the desired issues, they also conduct interviews in a conversational style. This approach results in a more thorough exchange of views with the respondents, and offers greater insight into the relevant issues than more structured interviews may provide.
Step 4: The analysts conduct primary research with key industry participants and technology developers to obtain the required content. Interviews are completed with sources located throughout the world, in universities, national laboratories, governmental and regulatory bodies, trade associations, and end-user companies, among other key organizations. Our analysts contact the major commercial participants to find out about the advantages and disadvantages of processes and the drivers and challenges behind technologies and applications. Our analysts talk to the principal developers, researchers, engineers, business developers,
analysts, strategic planners, and marketing experts, among other professionals.
Step 5: The project management and research team reviews and analyzes the research data that are gathered and adds its recommendations to the draft of the final study. Having conducted both published studies and custom proprietary research covering many types of new and emerging technology activities as well as worldwide industry analysis, the management and research team adds its perspective and experience to provide an accurate, timely analysis. The analysts then prepare written final research services for each project and sometimes present key findings in analyst briefings to clients.

Analyst Desk--Enabling Technologies for High Power Applications
- Energy Band Gap: Wide band gap materials are materials that possess electronic band gap energy of more than one or two electron volt (eV). Due to wide band gap energy, power devices are capable of operating at high temperatures, and thus wide band gap materials are useful in applications where high temperature is crucial. Power devices operate at high temperatures without undergoing the intrinsic conduction effects
due to wide band gap energy.
- Dielectric Constant: Low dielectric constant increases material’s feasibility for high frequency operations.
- Saturation Velocity: The switching losses and EMI are low due to the excellent reverse recovery characteristics, and hence this property of high power devices eliminates the need for snubber circuits. The saturated electron drift velocity of power devices are capable of operating at high frequencies (radio frequency and microwave frequency range) due to high saturated electron drift velocity.
- Breakdown Electric Field: Power devices have high breakdown voltage due to the high electric breakdown field compared to Si-based power devices. The breakdown voltages of wide band gap semiconductor power devices are 5 to 10 times more (in some cases, it is more than times) than Si-based power devices. A high breakdown electric field also facilitates high device packaging density for integrated circuits (ICs), as this
property of power devices allows close integration of devices.

Table Of Contents

Innovations in High Power Electronics Impacting Key Sectors (TechVision)
1. EXECUTIVE SUMMARY

Executive Summary
Research Scope
Research Methodology
Research Methodology Step by Step Approach
Analyst Desk--Summary of High Power Electronics
Analyst Desk--Trends in High Power Electronics
Analyst Desk--Enabling Technologies for High Power Applications

2. TECHNOLOGY LANDSCAPE ASSESSMENT

Technology Landscape Assessment
High Power Electronics—A Sneak Preview
Enabling Technologies
Comparative Assessment of High Power Electronic Devices
High Power Electronic Devices Categorization
Wide Band Semiconductors Driving High Power Electronics
Opportunities Influencing Key Innovations

3. APPLICATIONS LANDSCAPE

Applications Landscape
Applicability of High Power Electronics in Automotive
Applicability of High Power Electronics in Aerospace
Applicability of High Power Electronics in Smart Grids
Applicability of High Power Electronics in Industrial Motors
Applicability of High Power Electronics in Data Centers

4. INNOVATIONS IMPACTING KEY APPLICATION SECTORS

Innovations Impacting Key Application Sectors
SiC Diodes Increase Efficiency of Frequency Converters
Robust SiC Devices
High-Efficiency GaN Transistors in Voltage Converters
SiC for Enhanced Energy Efficiency
GaN Transistors with High Electron Mobility
GaN Transistors for use in Power Electronics
Smart Power Modules Delivering High Performance and Efficiency
Monolithic LED-based on GaN offers Enhanced Efficiency
Innovation Ecosystem

5. IMPACT ASSESSMENT OF KEY INNOVATIONS

Impact Assessment of Key Innovations
Methodology to Assess Impact of Innovations
Impact Assessment of Key Innovations
Drivers Influencing Innovation Impact
Drivers Boosting Innovations in High Power Electronics
Challenges Influencing Innovations in High Power Electronics

6. DEMAND SIDE ASSESSMENT

Demand Side Assessment
Demand Side Assessment - Low Cost and Reliablity
Demand Side Assessment - Standardization and High Performance Devices
Demand Side Assessment - Packaging Needs and Support

7. STRATEGIES TO CAPITALIZE OPPORTUNITIES

Strategies to Capitalize Opportunities
Management Strategies for Capitalizing Opportunities
High Power Electronics: Positioning of Innovative Products
High Power Electronics: Positioning of Innovative Products Explained
High Power Electronics: Positioning of Innovative Products - Value for Money and Value Added Solution

8. STRATEGIES DIRECTIONS

Strategies Directions
Impact of Megatrends on High Power Semiconductor
Key Conclusions
Key Recommendations

9. KEY PATENTS

Key Patents
High Power Devices Patents
Legal Disclaimer

10. THE FROST and SULLIVAN STORY

The Frost and Sullivan Story
Value Proposition: Future of Your Company and Career
Global Perspective
Industry Convergence
360º Research Perspective
Implementation Excellence
Our Blue Ocean Strategy

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