Table of Contents
The First GaN On Silicon Led By Toshiba On The Market
New In This Led: Silicon Substrate, Bonding Without Gold, Mesa Structure, Thinned Epitaxial Structure
Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.
The TL1F1 LED are produced on a cheap 8" silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding
process without gold.
Moreover, a significant work has been done to thin the epitaxial layer in GaN. The thickness of the GaN layer is close to thicknesses measured on Sapphire LED.
A low current density per sq cm is obtained, estimated at 20A/cm², lower than sapphire LED. But the second generation GaN on Si LED produces 30% more lumen.
This report provides a complete teardown of the LED die and the package with:
- Detailed photos
- Material analysis
- Detailed structure of dies and package
- Manufacturing process flow
- In-depth economical analysis
- Manufacturing cost breakdown
- Selling price estimation
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