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Reverse Costing of Rohm SCH2080KE SiC MOSFET

  • April 2014
  • -
  • System Plus Consulting
  • -
  • 100 pages

The SCH2080KE fromROHM Semiconductor is a 2nd generation high-voltage SiC (SiliconCarbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE is optimized for solar inverter, induction heating or motor drives applications.

The SCH2080KE 1200V MOSFET offers a very low on-resistance (80m?), a fast switching speed and a fast reverse recovery. The MOSFET is already integrated in power modules by Danfoss.

Based on a complete teardown analysis (power module, mechanical parts, SiC MOSFETs and SiC Diodes), the report provides an estimation of the production cost of SCH2080KE discrete, SiC MOSFET transistor and Schottky Barrier diode.

Table Of Contents

Reverse Costing of Rohm SCH2080KE SiC MOSFET
1. Overview / Introduction

2. Companies Profile
- Rohm and SiCrystal Profile

3. SCH2080KE Characteristics
- SCH2080KE Characteristics

4. SCH2080KE Physical Analysis

- Physical Analysis Methodology
- Package Views and Dimensions
- Leadframe

MOSFET

- Die View, Dimensions and Marking
- Guard Ring
- Delayering, Metal Layers
- Source and Gate
- Cross-Section, Source Cross-Section
- Substrate and Epitaxy Layers, Backside
- MOSFET Characteristics

Diode

- Die View, Dimensions and Marking
- Guard Ring, Cross-Section
- Substrate and Epitaxy Layers
- Backside
- Diode Characteristics

5. Manufacturing Process Flow
- Global Overview
- MOSFET Front end Unit, Tests Unit
- Transistor Process Flow
- Diode Front end Unit, Process Flow

6. Cost Analysis
- Synthesis of the cost analysis
- Main steps of economic analysis
- MOSFET
- Yields Hypotheses
- MOSFET Epitaxy Cost
- MOSFET Front-End Cost
- MOSFET Wafer Cost
- MOSFET Cost per process steps
- MOSFET : Equipment Cost per Family
- MOSFET : Material Cost per Family
- MOSFET : Back-End : Probe and
- Diode SCH2080KE
- SCH2080KE - Package and Final Test

7. Price Estimation

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