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Reverse Costing of Infineon CoolMOS C7 SuperjunctionMOSFET

  • April 2014
  • -
  • System Plus Consulting
  • -
  • 80 pages

7th generation Superjunction MOSFET

The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100°C), the C7 is optimized for hard switching topologies such as Power Factor Correction, solar boost circuit applications.

The CoolMOSTM C7 offers a very low on-resistance (between 19m? and 225m?), and a fast switching speed, more than 100KHz. The C7 differs from the C6 via a new multi-epitaxy technology and an original contact solution.

This reverse costing report provides an estimation of the production cost of the IPD65R225C7, a discrete CoolMOS transistor.

Table Of Contents

Reverse Costing of Infineon CoolMOS C7 SuperjunctionMOSFET
1. Overview / Introduction

2. Companies Profile

Infineon Profile

3. IPD65R225C7 Characteristics

IPD65R225C7 Characteristics

4. IPD65R225C7 Physical Analysis

Physical Analysis Methodology
Package Views and Dimensions
Package Cross-Section
Leadframe

MOSFET

Die View, Dimensions and Marking
Gate Supply Line
Guard Ring
Delayering
Metal Layers
Source and Gate
Source Cross-Section
Substrate and Epitaxy Layers
Superjunction Structure
Backside
MOSFET Characteristics

5. Manufacturing Process Flow

Global Overview
MOSFET Front end Unit
MOSFET Tests Unit
Transistor Process Flow

6. Cost Analysis

Synthesis of the cost analysis
Main steps of economic analysis
Yields Hypotheses
MOSFET Epitaxy Cost
MOSFET Front-End Cost
MOSFET Wafer Cost
MOSFET Cost per process steps
MOSFET : Equipment Cost per Family
MOSFET : Material Cost per Family
MOSFET : Back-End : Probe and
IPD65R225C7 - Package
IPD65R225C7 - Final Test

7. Price Estimation

Contact

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