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The GS66508P from GaN Systems is a GaN on Silicon HEMT transistor 650V high-voltage in a new GaNpx Embedded Die package. With a breakdown voltage of 650V for a current of 30A, (25°C), with lower switching losses and higher frequency operating. The transistor is optimized for AC-DC converters and high frequency, high efficiency power conversion.
The GS66508P is packaged is an innovative embedded die package developed by AT&S. The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layers structure is used to reduce the stress and the dislocation. This is completed by a thick superlattice structure clearly visible in the TEM analysis.
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