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Reverse Costing of AT&S GS66504P GaN Systems GS66508P HEMT

  • January 2015
  • -
  • System Plus Consulting
  • -
  • 117 pages

The GS66508P from GaN Systems is a GaN on Silicon HEMT transistor 650V high-voltage in a new GaNpx Embedded Die package. With a breakdown voltage of 650V for a current of 30A, (25°C), with lower switching losses and higher frequency operating. The transistor is optimized for AC-DC converters and high frequency, high efficiency power conversion.

The GS66508P is packaged is an innovative embedded die package developed by AT&S. The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layers structure is used to reduce the stress and the dislocation. This is completed by a thick superlattice structure clearly visible in the TEM analysis.

Table Of Contents

Reverse Costing of ATandS GS66504P GaN Systems GS66508P HEMT
Overview / Introduction

Companies Profile

Physical Analysis

Physical Analysis Methodology
Package Views and Dimensions
X-Ray
Package Coross-Section
GaNpx - ECP technology
Redistribution
GaN transistor Analysis
Guard Ring
Metal Layers
Source and Gate
Source Cross-Section
Substrate and Epitaxy Layers
TEM Cross-Section
GaN Transistor Characteristics
Manufacturing Process Flow

Global Overview
GaN Transitor Process Flow
Package Process Flow
Cost Analysis

Synthesis of the cost analysis
Main steps of economic analysis
Yields Hypotheses
GaN Transitor Front-End Cost
GaN Transistor Wafer Cost
GaN Transistor Cost per process steps
GaN Transistor: Equipment Cost per family
GaN Transistor: Material Cost per family

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