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  4. > Reverse Costing of Cree CAS300M17BM2 CREE 1700V SiC Module

Reverse Costing of Cree CAS300M17BM2 CREE 1700V SiC Module

  • March 2015
  • -
  • System Plus Consulting
  • -
  • 139 pages

The CAS300M17BM2 from CREE Semiconductor is a 2-transistor power module with a breakdown voltage of 1700V for a current of 225A (90°C), an ultra low on-resistance (8m?), a fast switching speed and a fast reverse recovery.

The 1700V module integrates twelve 2nd generation high-voltage SiC power MOSFET dies with a current of 50A (90°C) for 29sq mm.

Twelve Z-Rec diodes of 36 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode.

The 1700V MOSFET has a new gate design, a more sophisticated ohmic contact and an optimized technology to reduce the epitaxy layer thickness. A comparison with a 1200V SiC module is done in the report for the MOSFET, Diode and Module.

Based on a complete teardown analysis, the report provides an estimation of the production cost of the CAS300M17BM2 package, SiC MOSFET Transistor and Schottky Barrier Diode.

Table Of Contents

Reverse Costing of Cree CAS300M17BM2 CREE 1700V SiC Module
1. Overview / Introduction

2. Companies Profile

3. CREE Profile

4. CAS120M12BM2 Characteristics

5. CAS300M17BM2 Characteristics

6. CAS120M12BM2 Physical Analysis

7. Physical Analysis Methodology
- Package Views and Dimensions

8. MOSFET

9. Die View, Dimensions and Marking
- Guard Ring
- Cross-Section Gate
- Substrate and Epitaxy Layers, Backside
- MOSFET Characteristics

10. Diode

11. Die View, Dimensions and Marking
- Guard Ring, Cross-Section
- Substrate and Epitaxy Layers
- Backside
- Diode Characteristics

12. Comparison 1700V and 1200V

13. Module, MOSFET, Diode

14. Manufacturing Process Flow

15. Global Overview
- MOSFET Front end Unit, Tests Unit
- Transistor Process Flow
- Diode Front end Unit, Process Flow
- Diode Process Flow
- Power Module Process Flow

16. Cost Analysis

17. Synthesis of the cost analysis
- Main steps of economic analysis

18. MOSFET

19. Yields Hypotheses
- MOSFET Epitaxy Cost
- MOSFET Front-End Cost
- MOSFET Wafer Cost
- MOSFET Cost per process steps
- MOSFET : Back-End : Probe and

20. Diode

21. CAS300M17BM2

22. Package and Final Test

23. Price Estimation

24. Contact

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