1. Market Research
  2. > Energy & Environment
  3. > Energy
  4. > Electric Power Market Trends
  5. > Reverse Costing of Transphorm TPH3002PS GaN transistor

Reverse Costing of Transphorm TPH3002PS GaN transistor

  • May 2015
  • -
  • System Plus Consulting
  • -
  • 137 pages

The TPH3002PS is a 600V EZ-GaN™ HEMT for high frequency operations from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme which increases switching speed by 200%. With a 7.5ns turn-on and a 10ns turn-off, the TPH3002PS has a higher switch frequency than the best CoolMOS.

The TPH3002PS is based on a cascode configuration of a GaN on Silicon HEMT transistor to hold the high voltage and a standard low voltage MOSFET to drive high frequency and to make a normally-off transistor from a normally-on GaN HEMT.

The device is assembled in a TO220 package for an easy integration in converter electronic system. Moreover, it integrates a Quiet-Tab™ and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency and to allow 200% increase in switching speed compared to traditional TO-220.

The report presents a deep technology analysis of the packaging and the components with TEM images of the complex GaN epitaxy layer stack and transistor structure.

It also includes production cost analysis and overall comparison with GaN Systems GS66508P 650V HEMT.

Table Of Contents

Reverse Costing of Transphorm TPH3002PS GaN transistor
1. Overview / Introduction

2. Companies Profile

3. Physical Analysis

4. Physical Analysis Methodology
- Package
- Package Views and Dimensions
- Package Opening
- Package Cross-Section

5.GaN on Si HEMT Die
- View, Dimensions and Marking
- Die Process
- Die Cross-Section, SEM and TEM

6. Resistor Die
- View and Dimensions
- Die Process
- Die Cross-Section

7. MOSFET Die
- View and Dimensions
- Die Process
- Die Cross-Section

8. Manufacturing Process Flow

9. Overview
- GaN HEMT Process Flow
- Resistor Process Flow
- MOSFET Process Flow
- Wafer Fabrication Units
- Packaging Process Flow

10. Cost Analysis

11. Main steps of economic analysis
- Yields Hypotheses
- GaN HEMT Front-End and Back-End Cost
- GaN HEMT process steps and Die Cost
- Resistor Front-End and Back-End Cost
- Resistor process steps and Die Cost
- MOSFET Front-End and Back-End Cost
- MOSFET Die Cost
- Packaging and Final Test Cost
- TPH3002PS Module Cost

12. Price Estimation

13. Comparison with GaN System GS66508P

View This Report »

Get Industry Insights. Simply.

  • Latest reports & slideshows with insights from top research analysts
  • 24 Million searchable statistics with tables, figures & datasets
  • More than 10,000 trusted sources
24/7 Customer Support

Talk to Ahmad

+1 718 618 4302

Purchase Reports From Reputable Market Research Publishers
Cable and Accessories Market by Overhead, Underground, Submarine and End-User - Global Forecast to 2021

Cable and Accessories Market by Overhead, Underground, Submarine and End-User - Global Forecast to 2021

  • $ 5650
  • Industry report
  • October 2016
  • by MarketsandMarkets

“Cable and Accessories market projected to grow at a CAGR of 6.5% from 2016 to 2021” The cable and accessories market is expected to reach a size of USD 202.07 billion by 2021, at a CAGR of 6.5% from ...

Outage Management System Market by Type, Component, End User, and Region - Global Forecasts to 2021

Outage Management System Market by Type, Component, End User, and Region - Global Forecasts to 2021

  • $ 5650
  • Industry report
  • November 2016
  • by MarketsandMarkets

“The outage management system market is projected to grow at a CAGR of 18.4% from 2016 to 2021” The outage management system market is projected to reach USD 1,148.6 million by 2021, growing at a ...

Shunt Reactor Market: Global Industry Analysis and Opportunity Assessment, 2016-2026

Shunt Reactor Market: Global Industry Analysis and Opportunity Assessment, 2016-2026

  • $ 5000
  • Industry report
  • October 2016
  • by Future Market Insight Global & Consulting Pvt Ltd

A shunt reactor is an electrical device mainly used to absorb reactive power in an electrical power grid system. In a power transmission and distribution system, the voltage at the receiving end of electrical ...


ref:plp2015

Reportlinker.com © Copyright 2016. All rights reserved.

ReportLinker simplifies how Analysts and Decision Makers get industry data for their business.