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Next Generation Memory Market by Technology, Volatile Memory and SRAM, Application & Geography - Global Forecast to 2013 - 2020

  • January 2015
  • 192 pages
  • MarketsandMarkets
Report ID: 2677225


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The global next generation memory market is witnessing a very high growth rate as the need for advanced high density memories that can cater to the needs of the ever evolving complex computing systems is increasing. Over the last decade, the need for highly scalable memory solutions with low power dissipation levels has triggered the demand for next generation memory technologies that can sustain very high data rates at relatively lesser power levels. Characteristics such as high write and read latency, high scalability, and high endurance levels, among others, make the emerging next generation memories welcome replacements for traditional non-volatile memories. Next generation memory technologies covered in this report are the “non-volatile next generation memory technologies” such as Memristor or Resistive Random Access Memory (ReRAM), Phase Change Memory (PCM), Magneto-resistive Random Access Memory (MRAM), and Ferroelectric Random Access Memory (FeRAM), among other technologies.

Emerging volatile next generation memory technologies included in the report are Static Random Access Memory (SRAM) and Dynamic Random Access Memory (DRAM), which include Synchronous DRAM (SDRAM), mobile DRAM, and other emerging DRAM technologies. Out of these memories, only MRAM and FeRAM account for a reasonable market share and they are fairly commercialized in the market. The next generation memory market is studied in depth, with the inclusion of the market segmentation, along with the above mentioned products.

The next generation memory market is also mapped against geography. The market by geography is segmented into various economic regions such as Americas, Europe, APAC, and ROW. Apart from the market segmentation, the report also includes critical market data showing the industry trends analysis, Porter’s five force analysis, value chain analysis, and comparative analysis of the next generation memory technologies.

The report encompasses detailed analysis of the next generation memory market for a period spanning 2013-2020. Recent megatrends and micro trends in the global next generation memory market have been studied and the market forecasts for the period under study have been presented. This report analyzes the findings by considering the market dynamics that shape it. These dynamics are categorized under three headers: drivers, restraints, and opportunities. The market estimation and forecasting have been done with the help of the market dynamics. The report also presents detailed profiles of various companies that are currently active in the next generation memory market.

In addition to the company profiles, the report does provide a Competitive Landscape (CL) of the key players for each product segment. The CL covers market share analysis, mergers and acquisitions, collaborations, partnerships, new product developments, and the key growth strategies of each player. The entire value chain of the next generation memory market has been covered under the study, which reveals actionable insights of the various players in the value chain. The major players covered under the study include SanDisk Corporation (U.S.), Toshiba Corporation (Japan), Intel Corporation (U.S.), Micron Technology, Inc. (U.S.), Adesto Technologies Corporation, Inc. (U.S.), Fujitsu Ltd. (Japan), SK Hynix Semiconductor, Inc. (South Korea), Samsung Electronics Co., Ltd. (South Korea), Cypress Semiconductor Corporation (U.S.), and IBM (U.S.).

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