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Reverse Costing of Cree CAS120M12BM2 CREE 1200V SiC Module

  • February 2015
  • 136 pages
  • System Plus Consulting
Report ID: 3673876

Summary

Table of Contents

The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13m?), a fast switching speed and a fast reverse recovery.

The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode.

The second generation MOSFET has a new gate design, a more sophisticated ohmic contact and a thinner substrate, the comparison between the 2 generation is doing in the report.

System Plus Consulting is publishing a reverse costing report on this module. Based on a complete teardown analysis, the report provides an estimation of the production cost of the CAS120M12BM2 package, SiC MOSFET Transistor and Schottky Barrier Diode.

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