3D NAND Flash Memory Market by Type, Application, and End User : Global Opportunity Analysis and Industry Forecast, 2021–2030

3D NAND Flash Memory Market by Type (Single-Level Cell, Multi-Level Cell, and Triple-Level Cell), Application (Camera, Laptops & PCs, Smartphones & Tablets, and Others), and End User (Automotive, Consumer Electronics, Enterprise, Healthcare, and Others): Global Opportunity Analysis and Industry Forecast, 2021–2030

The global 3D NAND flash memory market size was valued at $12.38 billion in 2020, and is projected to reach $78.42 billion by 2030, registering a CAGR of 20.3% from 2021 to 2030. 3D NAND, also known as vertical NAND, is a form of non-volatile flash memory in which flash memory cells on a transistor die are stacked vertically to increase storage mass.
The growth of the global 3D NAND flash memory market is majorly driven by rise in space constraints on the semiconductor wafer paired with high performance & low latency of 3D NAND flash memory. Moreover, increase in demand for data centres is anticipated to drive the growth of 3D NAND flash memory. However, precision required at the time of manufacturing and high manufacturing cost are acting as a prime restraint of the global 3D NAND flash memory market. On the contrary, rise in penetrations of Internet of Things application is anticipated to provide lucrative opportunities for the 3D NAND flash memory industry during the forecast period.
The 3D NAND flash memory market is segmented on the basis of type, product type, application, and region. The type segment includes single-level cell, multi-level cell, and triple-level cell. By application, the market is classified into camera, laptops & PCs, smartphones & tablets. By end user, it is categorized into automotive, consumer electronics, enterprise, healthcare, and others. Region-wise, the 3D NAND flash memory market trends are analyzed across North America (the U.S., Canada, and Mexico), Europe (the UK, Germany, France, and the rest of the Europe), Asia-Pacific (China, Japan, India, South Korea, and the rest of the Asia-Pacific), and LAMEA (Latin America, the Middle East, and Africa).
The key players operating in the market include 3D NAND flash memory market players, such as Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, and SanDisk Corporation.

Key Market Segments

By Type
• Single-level Cell
• Multi-level Cell
• Triple-level Cell

By Product Type
• Camera
• Laptops and PCs
• Smartphones & Tablets
• Others

By Application
• Automotive
• Consumer Electronics
• Enterprise
• Healthcare
• Others

By Region
• North America
o U.S.
o Canada
o Mexico
• Europe
o UK
o Germany
o France
o Rest of Europe
• Asia-Pacific
o China
o Japan
o India
o South Korea
o Rest of Asia-Pacific
• LAMEA
o Latin America
o Middle East
o Africa

Key Market Players
• Samsung Electronics Co., Ltd.,
• Toshiba Corporation
• SK Hynix Semiconductor, Inc.
• Micron Technology, Inc.,
• Intel Corporation
• Apple Inc.
• Lenovo Group Ltd.,
• Advanced Micro Devices
• STMicroelectronics
• SanDisk Corporation